PBSS4032PD

DataSheet.in PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032ND. 1.2 Features „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −3 A; IB = −300 mA [1] Conditions open base Min - Typ 88 Max −30 −2.7 −5 130 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. DataSheet.in NXP Semiconductors PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym030 Simplified outline Graphic symbol 1, 2, 5, 6 3. Ordering information Table 3. Ordering information Package Name PBSS4032PD SC-...