PBSS4032ND

DataSheet.in PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. 1.2 Features „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA [1] Conditions open base Min - Typ 50 Max 30 3.5 6 75 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. DataSheet.in NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym014 Simplified outline Graphic symbol 1, 2, 5, 6 3. Ordering information Table 3. Ordering information Package Name PBSS4032ND SC-74 Des...