DataSheet.in
PMEG2020CPA
2 A low VF dual MEGA Schottky barrier rectifier
Rev. 1 — 5 August 2010 Product data sheet
1. ...
DataSheet.in
PMEG2020CPA
2 A low VF dual MEGA
Schottky barrier rectifier
Rev. 1 — 5 August 2010 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 2 A Reverse voltage: VR ≤ 20 V Low forward voltage Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability AEC-Q101 qualified
1.3 Applications
Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Per diode IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 80 °C Tsp ≤ 140 °C VR VF IR
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
385 380
2 2 20 420 1000
A A V mV μA
reverse voltage forward voltage reverse current IF = 2 A VR = 20 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
D a t a S h e e t . i n
NXP Semiconductors
PMEG2020CPA
2 A low VF dual MEGA
Schottky...