IRF7410PBF

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 96028B IRF7410PbF HEXFET® Power MOSFET RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V ID -16A -13.6A -11.5A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. This benefit provides the designer with an extremely efficient device for use in battery S 3 and load management applications.. G4 8 A D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -16 -13 -65 2.5 1.6 20 ±8 -55 to +150 Units V A W mW/°C V °C Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambientƒ Max. 50 Units ...