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TP3N120

IXYS Corporation
Part Number TP3N120
Manufacturer IXYS Corporation
Description ICTP3N120
Published Oct 9, 2010
Detailed Description com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA 3N120 IXTP ...
Datasheet PDF File TP3N120 PDF File

TP3N120
TP3N120

Overview
com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA 3N120 IXTP 3N120 VDSS 1200 V ID25 3A RDS(on) 4.
5 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 3 12 3 20 700 5 200 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C Features z z z TO-220 (IXTP) D (TAB) G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain ...


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