Part Number |
K1304 |
Manufacturers |
Renesas Technology |
Logo |
|
Description |
2SK1304 |
Datasheet |
K1304 Datasheet (PDF) |
www.DataSheet4U.com
2SK1304
Silicon N Channel MOS FET
REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive • • • •
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
S 2 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1304
www.DataSheet4U.com
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 100 ±20 40 160 40 100 150 –55 to +150
Unit V V A A A W
*2
Tstg
°C °C
Electrical Characteristics
(Ta = 25°C)
Item.