C5584

Power Transistors www.DataSheet4U.com 2SC5584 Silicon NPN triple diffusion mesa type For horizontal deflection output 20.0±0.5 Unit: mm (10.0) (6.0) (2.0) (4.0) 5.0±0.3 (3.0) φ 3.3±0.2 ■ Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide safe operation area 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO VEBO IB IC ICP PC Rating 1 500 1 500 600 7 8 20 30 150 3.5 150 −55 to +150 °C °C Unit V V V V A A A W 20.0±0.5 (2.5) Solder Dip 1 2 3 1: Base 2: Collector 3: Emitter TOP-3L-A1 Package Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.5 A IC = 1...