STW14NC50
www.DataSheet4U.com
N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET
TYPE STW14NC50
s s s s s
STW14NC50
VDSS 5...
Description
www.DataSheet4U.com
N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET
TYPE STW14NC50
s s s s s
STW14NC50
VDSS 500V
RDS(on) < 0.38Ω
ID 14 A
TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 14 8.7 56 190 1.5 3.5 –65 to 150 150
(1)ISD ≤14A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C
()Pulse width limited by safe operating area
May 2001
1/8
www.DataSheet4U.com
STW14NC50
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-ca...
Similar Datasheet