B1018A

www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 www.DataSheet4U.com 2SB1018A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitt...