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E L E C T R O N I C
RTM2301
20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and ...
