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E L E C T R O N I C
RTM2302
20V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 65mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical c...
