NTMFS4821N

www.DataSheet4U.com NTMFS4821N Power MOSFET Features 30 V, 58.5 A, Single N−Channel, SO−8 FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package These are Pb−Free Device Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 13.8 10 2.14 22.4 16.1 5.61 8.8 6.4 0.87 58.5 42.3 38.5 117 100 −55 to +150 38.5 6 86 W A A °C A V/ns mJ NTMFS4821NT3G W A W A 1 http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 6.95 mW @ 10 V 10.8 mW @ 4.5 V ID MAX 58.5 A Applications D (5,6) Unit V V A S (1,2,3) W A N−CHANNEL MOSFET G (4) MARKING DIAGRAM D S S S G 4821N AYWWG G D D SO−8 FLAT LEAD CASE 488AA STYLE 1 D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Packa...