SUD50N02-12P

www.DataSheet4U.com SUD50N02-12P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.012 @ VGS = 10 V 0.026 @ VGS = 4.5 V ID (A)a 40c 27c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-12P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TC = 25_C TC= 100_C ID IDM IS PD PD TJ, Tstg Symbol VDS VGS Limit 20 "20 40c 28c 90 4 33.3 6a - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A. Document Number: 72095 S-31269—Rev. B, 16-Jun-03 www.vishay.com t v 10 sec Steady State RthJA RthJC Symbol Typical 20 40 3.7 Maximum 25 50 4.5 Unit _C/W 1 SUD50N02-12P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate ...