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C5354

Toshiba Semiconductor
Part Number C5354
Manufacturer Toshiba Semiconductor
Description 2SC5354
Published Sep 15, 2010
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching...
Datasheet PDF File C5354 PDF File

C5354
C5354


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications 2SC5354 Unit: mm • Excellent switching times: tr = 0.
7 μs (max) tf = 0.
5 μs (max) (IC = 2 A) • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 V 800 V 7 V 5 A 8 2 A 100 W 150 °C −55 to 15...



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