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NJW0302G

ON Semiconductor

NPN-PNP Power Bipolar Transistors

NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower po...


ON Semiconductor

NJW0302G

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Description
NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 3 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant Benefits Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth Applications High−End Consumer Audio Products ♦ Home Amplifiers ♦ Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO VCEX IC ICM IB PD TJ, Tstg 250 250 5.0 250 15 30 1.5 150 −  65 to +150 Vdc Vdc Vdc Vdc Adc Adc Adc Watts °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress r...




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