N-Channel Enhancement Mode Field Effect Transistor
Description
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N-Channel Enhancement Mode Field Effect Transistor FEATURES
55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP3205/CEB3205
PRELIMINARY
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S CEB SERIES TO-263(DD-PAK)
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CEP SE...
