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SMD Type
Transistors
PNP General Purpose Double Transistor KC856S(BC856S)
SOT-363
1.3
+0.1 -0.1
...
www.DataSheet4U.com
SMD Type
Transistors
PNP General Purpose Double
Transistor KC856S(BC856S)
SOT-363
1.3
+0.1 -0.1
Unit: mm
0.65
0.525
Features
Reduces number of components and board space No mutual interference between the
transistors.
+0.15 2.3-0.15
0.36
0.1max
+0.1 0.3-0.1 +0.1 2.1-0.1
+0.05 0.1-0.02
1 E1 2 B1 3 C2
4 E2 5 B2 6 C1
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R
JA
Rating -80 -65 -5 -100 200 416 -65 to +150
Unit V V V mA mW /W
TJ, Tstg
Electrical Characteristics Ta = 25
Parameter Collector-Cutoff Current Emitter- cutoff current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Transistion frequency Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT Testconditons VCB =- 30 V, IE = 0 VCB =- 30 V, IE = 0, TA = 150 IC=0,VEB=-5V IC = -2.0 mA, VCE = -5.0 V IC = -10 mA, IB =- 0.5 mA IC = -100 mA, IB =- 5.0 mA IC = -10 mA, IB=-0.5mA VCB = -10 V, f = 1.0 MHz IC = -10 mA, VCE = -5.0V,f = 100 mHz 100 700 2.5 110 -100 -300 mV mV mV pF MHz Min Typ Max -15 -5.0 -100 Unit nA A nA
Marking
Marking 5F
+0.05 0.95-0.05
+0.1 1.25-0.1
Two
transistors in one package
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1
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