P-Channel Silicon MOSFET
Ordering number : EN8741
FTD1028
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
FTD10...
Description
Ordering number : EN8741
FTD1028
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
FTD1028
Features
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings --20 ±10 --3 --15 0.8 1.0 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=--2A, VGS=-4V ID=--1A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See s...
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