Document
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N08T1630CxB
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx16 bit
Overview
The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08T1630CxB is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard BGA and TSOP2 packages compatible with other standard 512Kb x 16 SRAMs.
Features
• Single Wide Power Supply Range 2.7 to 3.6 Volts • Very low standby current 70µA at 3.0V (Max) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Very fast access time 55ns address access option 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Green package option for TSOP and BGA
Product Family
Part Number
N08T1630C2BZ N08T1630C2BZ2 N08T1630C1BT N08T1630C1BT2
Package Type
48 - BGA Green 48 - BGA 44- TSOP2 Green 44- TSOP2
Operating Temperature
Power Supply (Vcc)
Speed
Standby Operating Current (ISB), Current (Icc), Max Max @ 3.0V
-40oC to +85oC
2.7V - 3.6V
55/70ns @ 2.7V
70 µA
3 mA @ 1MHz
Pin Configuration (Top View)
1
A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 A8 A9 A10 A11 A12 A13
Pin Descriptions
4
A1 A4 A6 A7 A16 A15 A13 A10
2
OE UB I/O10 I/O11 I/O12
3
A0 A3 A5 A17 VSS A14 A12 A9
5
A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11
6
CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC
Pin Name A0-A18 WE CE1 CE2 OE LB UB I/O0-I/O15 VCC VSS NC
Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input (BGA only) Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected
A B C D E F G H
LB I/O8 I/O9 VSS VCC
44 Pin TSOP2
I/O14 I/O13 I/O15 A18 NC A8
48 Ball BGA 6 x 8 mm
(DOC# 14-02-004 REV H ECN# 01-1102) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc. Functional Block Diagram
N08T1630CxB
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Address Inputs A0 - A18
Address Decode Logic
512K x 16 bit RAM Array
Input/ Output Mux and Buffers
I/O0 - I/O7
I/O8 - I/O15 CE1 CE2 WE OE UB LB
Control Logic
Functional Description
CE1 H X L L L L CE21 X L H H H H WE X X X L H H OE X X X X4 L H UB X X H L2 L2 L2 LB X X H L2 L2 L2 I/O0 - I/O152 High Z High Z High Z Data In Data Out High Z MODE Standby3 Standby3 Standby3 Write Read Active POWER Standby Standby Standby Active Active Active
1. CE2 only applies to BGA package. 2. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 3. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 4. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
(DOC# 14-02-004 REV H ECN# 01-1102) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
N08T1630CxB
Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating –0.3 to VCC+0.3 –0.3 to 4.5 500 –40 to 125 -40 to +85 260oC, 10sec Unit V V mW
o o o
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Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time
C C C
1. Stresses greater than thos.