Dual N-Channel MOSFET
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET
March 2010
FDS6930B Dual N-Channel Logic Level PowerTrench® MO...
Description
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET
March 2010
FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET
Features
■ 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely
low RDS(ON) ■ High power and current handling capability
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
D2 D2 D1
D1
SO-8 Pin 1
G2 S2 G1 S1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1) (Note 1a) (Note 1b) (Note 1c)
(Note 1a) (Note 1)
Ratings
30 ± 20 5.5 20
2 1.6 1 0.9 –55 to 150
78 40
Package Marking and Ordering Information
Device Marking
FDS6930B
Device
FDS6930B
Reel Size
13"
Tape width
12mm
Units
V V A W
°C °C/W...
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