STL17N3LLH6

www.DataSheet4U.com STL17N3LLH6 N-channel 30 V, 0.0038 Ω , 17 A PowerFLATTM(3.3x3.3) STripFETTM VI DeepGATETM Power MOSFET Features Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.0045 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1. Internal schematic diagram PowerFLAT™ (3.3 x 3.3) Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1. Device summary Marking 17N3L Package PowerFLAT™ (3.3 x 3.3) Packaging Tape and reel Order code STL17N3LLH6 July 2010 Doc ID 15535 Rev 2 1/10 www.st.com 10 www.DataSheet4U.com Contents STL17N3LLH6 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . ...