AUIRFB4610

AUTOMOTIVE GRADE PD - 96325 www.DataSheet4U.com Features l l l l l l l l HEXFET® Power MOSFET D AUIRFB4610 AUIRFS4610 100V 11m: 14m: 73A Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S V(BR)DSS RDS(on) typ. max. ID D Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® D G D S G D S TO-220AB AUIRFB4610 D2Pak AUIRFS4610 G D S Gate Absolute Maximum Ratings Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temper...