Power MOSFET
VDS
VGS Max
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
-30 ± 20 64
103
V V mΩ
mΩ
PD - 96310C
IRLML9301TRPbF...
Description
VDS
VGS Max
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
-30 ± 20 64
103
V V mΩ
mΩ
PD - 96310C
IRLML9301TRPbF
HEXFET® Power MOSFET
G1
3D
S 2 Micro3TM (SOT-23) IRLML9301TRPbF
Application(s) System/Load Switch
Features and Benefits Features
Low RDS(on) ( ≤ 64mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification
Benefits
Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability
Symbol
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Parameter
Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
VGS TJ, TSTG
Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s)
Max.
-30 -3.6 -2.9 -15 1.3 0.8 0.01 ± 20 -55 to + 150
Typ.
––– –––
Max.
100 99
Units
V
A
W W/°C
V °C
Units
°C/W
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
1
02/09/12
IRLML9301TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––...
Similar Datasheet