BUK6510-75C

www.DataSheet4U.com BUK6510-75C N-channel TrenchMOS FET Rev. 01 — 1 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ EngineMotors, lamps and solenoid control management „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 ID = 100 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ 8.9 Max Unit 75 78 158 V A W Static characteristics 10.2 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 121 mJ www.DataSheet4U.com NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 2. ...