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N04Q1618C2B Dataheets PDF



Part Number N04Q1618C2B
Manufacturers AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N04Q1618C2B DatasheetN04Q1618C2B Datasheet (PDF)

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricate.

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AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability. The device can operate over a very wide temperature range of 0oC to +70oC for the lowest power and is also available in the industrial range of -40oC to +85oC. The devices are available in standard BGA and TSOP packages. The devices are also available as Known Good Die (KGD) for embedded package applications. Features • Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ • Very low standby current 50nA typical for 1.2V operation • Very low operating current 400µA typical for 1.2V operation at 1µs • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Automatic power down to standby mode • BGA, TSOP and KGD options • RoHS Compliant Product Options Part Number N04Q1612C2Bx-15C1 N04Q1618C2Bx-15C1 N04Q1618C2Bx-70C N04Q1618C2Bx-85C Typical Standby Current 50nA 50nA 200nA 200nA 1.8 1.8, 3.0 Vcc (V) 1.2 VccQ (V) 1.2, 1.8, 3.0 Speed (nS) 150ns 150ns 70ns 85ns Typical Operating Operating Current Temperature 0.4 mA @ 1MHz 0.4 mA @ 1MHz 0.6 mA @ 1MHz 0.6 mA @ 1MHz 0oC to +70oC 1. Part numbers are under development. Please contact your local sales representative for details. Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice. 1 N04Q1618C2B AMI Semiconductor, Inc. Pin Configurations (4Mb) Advance Information www.DataSheet4U.com A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCCQ I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17 1 A B C D E F G H LB I/O8 I/O9 VSS 2 OE UB I/O10 I/O11 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC VCCQ I/O12 I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) TSOP II Pin Descriptions Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Power for I/O Core Ground Not Connected Stock No. 23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice. 2 N04Q1618C2B AMI Semiconductor, Inc. Functional Block Diagram Address Inputs (A1 - A4) Advance Information www.DataSheet4U.com Word Address Decode Logic Address Inputs (A0, A5 - A17) Page Address Decode Logic 4Mb RAM Array Input/ Output I/O0 - I/O7 Mux and Buffers I/O8 - I/O15 Word Mux CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 H X L L L L CE2 X L H H H H WE X X X L H H OE X X X X3 L H UB1 X X H L1 L1 L1 LB1 X X H L1 L 1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby Write3 Read Active POWER Standby Standby Standby Active Active Active L1 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Co.


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