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N02M0818L2A Dataheets PDF



Part Number N02M0818L2A
Manufacturers NanoAmp Solutions
Logo NanoAmp Solutions
Description 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
Datasheet N02M0818L2A DatasheetN02M0818L2A Datasheet (PDF)

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L2A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview The N02M0818L2A is an integrated memory device intended for implanted life-support (Class 3) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp.

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L2A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview The N02M0818L2A is an integrated memory device intended for implanted life-support (Class 3) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N02M0818L1A, which is intended for non life-support (Class 1 and 2) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02M0818L2A is optimal for various applications where low-power is critical such as implanted pacemaker devices. The device can operate over a very wide temperature range of -20oC to +60oC and is available in die form as well as in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs Features • Single Wide Power Supply Range 1.3 to 2.3 Volts • Very low standby current 200nA typical at 2.1V and 37 deg C • Very low operating current 1 mA at 2.0V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.0V • Automatic power down to standby mode • TTL compatible three-state output driver Product Family Part Number N02M0818L2AN Package Type 32 - STSOP I Operating Temperature -20oC to +60oC Power Supply (Vcc) 1.3V - 2.3V Speed 100ns @ 1.65V 500ns @ 1.3V Standby Current (ISB) 450nA @ 2.3V Operating Current (Icc), Max 2.5 mA @ 1MHz N02M0818L2AD Known Good Die Pin Configuration Pin Descriptions Pin Name A0-A17 Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground A11 A9 A8 A13 WE CE2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 N02M0818L2A STSOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 Vss I/O2 I/O1 I/O0 A0 A1 A2 A3 WE CE1, CE2 OE I/O0-I/O7 VCC VSS (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 NanoAmp Solutions, Inc. Functional Block Diagram N02M0818L2A VCCQ(opt) www.DataSheet4U.com Address Inputs A0 - A3 Word Address Decode Logic Word Mux Address Inputs A4 - A17 Page Address Decode Logic 16K Page x 16 word x 8 bit RAM Input/ Output Mux and Buffers I/O0 - I/O7 CE1 CE2 WE OE Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H Control Logic I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF VIN = 0V, f = 1 MHz, TA = 25oC 1. These parameters are verified in device characterization and are not 100% tested (DOC#14-02-036 Rev C ECN#01-0887) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 NanoAmp Solutions, Inc. Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER N02M0818L2A Rating –0.3 to VCC+0.3 –0.3 to 3.0 500 –40 to 125 -20 to +60 240oC, 10sec(Lead only) Unit V V mW o www.DataSheet4U.com C oC oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Recommended Operating Limits (Not all inclusive values tested)1 Item Core Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µs Cycle Time2 Read/Write Operating Supply Current @ 85 ns Cycle Time2 Standby Current 3 Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 Test Conditions Chip Disabled (Note 3) Min. 1.3 1.0 Max 2.3 Unit V V V V V V µA .


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