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N02L6181A Dataheets PDF



Part Number N02L6181A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N02L6181A DatasheetN02L6181A Datasheet (PDF)

N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single c.

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N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L6181A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs. www.DataSheet4U.com Features • Single Wide Power Supply Range 1.65 to 2.2 Volts • Very low standby current 0.5µA at 1.8V (Typical) • Very low operating current 1.4mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package Product Family Part Number N02L6181AB N02L6181AB2 Package Type 48 - BGA Green 48-BGA Operating Temperature Power Supply (Vcc) Speed 70 and 85ns @ 1.65V Standby Operating Current (ISB), Current (Icc), Max Max 10 µA 3 mA @ 1MHz -40oC to +85oC 1.65V - 2.2V ©2008 SCILLC. All rights reserved. July 2008 - Rev. 4 Publication Order Number: N02L6181A/D N02L6181A Pin Configurations 1 A B C D E F G H LB I/O8 I/O9 VSS VCC www.DataSheet4U.com 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 NC NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6 x 8 mm Pin Descriptions Pin Name A0-A16 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground Rev. 4 | Page 2 of 11 | www.onsemi.com N02L6181A Functional Block Diagram Word Address Decode Logic Word Mux Input/ Output Mux and Buffers www.DataSheet4U.com Address Inputs A0 - A3 Address Inputs A4 - A16 Page Address Decode Logic 8K Page x 16 word x 16 bit RAM Array I/O0 - I/O7 I/O8 - I/O15 CE WE OE UB LB Control Logic Functional Description CE H L L L L WE X X L H H OE X X X 3 UB X H L 1 LB X H L 1 I/O0 - I/O151 High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Write3 Read Active POWER Standby Standby Active Active Active L H L1 L1 L1 L1 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25 C o Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested Rev. 4 | Page 3 of 11 | www.onsemi.com N02L6181A Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating –0.3 to VCC+0.3 –0.3 to 3.0 500 –40 to 125 -40 to +85 240oC, 10sec(Lead only) www.DataSheet4U.com Unit V V mW oC o o C C 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µs Cycle Time2 Read/Write Operating Supply Current @ 70 ns Cycle Time2 Page Mode Operating Supply.


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