CHA6518

www.DataSheet4U.com CHA6518 RoHS COMPLIANT 5 – 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: the backside of the chip is both RF and DC grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Vg Vg Vd Main Features n n n n n n 0.25 µm Power pHEMT Technology 5 – 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min 5 Typ 33.5 24 Max 18 Unit GHz dBm dB Ref. : DSCHA65185007 - 7 Jan 05 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier Electrical Characteristics Tamb = 25°C (2), Vd=8V, Ic (Quiescient) = 1A, CW biasi...