6 - 18 GHz High Power Amplifier
www.DataSheet4U.com
CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
Th...
Description
www.DataSheet4U.com
CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: the backside of the chip is both RF and DC grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Output Power versus Frequency
Vg
Vd3
Main Features
0.25 µm Power pHEMT Technology 6 – 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm
INPUT A OUTPUT A
Vd1
Vd2
Vd3
INPUT B
OUTPUT B
Vg
Vd3
Main Characteristics
Tamb = +25° C (Tamb is the back-side of the chip) Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm dB
Ref. : DSCHA6517-8205 - 25 Jun 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
Electrical Characteristics
X-band High Power www.DataSheet4U.com Amplifier
Tamb = 25° C (2), ...
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