EMX2DXV6T5

www.DataSheet4U.com EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features http://onsemi.com Reduces Board Space High hFE, 210 − 460 (Typical) Low VCE(sat), < 0.5 V These are Pb−Free Devices DUAL NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT (3) (2) (1) MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 100 Unit Vdc Vdc Vdc mAdc (4) (5) Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Unit mW mW/°C °C/W 6 1 Symbol PD Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) − 55 to +150 Unit mW mW/°C °C/W °C SOT−563 CASE 463A STYLE 2 (6) Q2 Q1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range MARKING DIAGRAM RqJA 3R M G G 1 RqJA TJ, Tstg 3R = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device EMX2DXV6T5 EMX2DXV6T5G Package SOT−563 (Pb−F...