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MRF8S26120HR3 Dataheets PDF



Part Number MRF8S26120HR3
Manufacturers Motorola
Logo Motorola
Description RF Power Field Effect Transistor
Datasheet MRF8S26120HR3 DatasheetMRF8S26120HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Chan.

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