MRF7S35120HSR3

Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 12 dB Drain Efficiency — 40% Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF Power Gain — 13 dB Drain Efficiency — 16% RCE — - 33 dB (EVM — 2.2% rms) Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power Capable of Handling 3 dB Overdrive @ 32 Vdc Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S35120HSR3 3100- 3500 MHz, 120 W PEAK, 32 V PULSED LATERAL N - CHANNEL RF POWER MOSFET CASE 465A - 06, STYLE 1 NI - 780S Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Tempera...