8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
Description
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Features
Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) Access Time – 90 ns Sector Erase Architecture
Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Two 8K Word (16K Byte) Sectors with Individual Write Lockout Four 4K Word (8K ...
