PDU-G106B-SM

UV Enhanced GaN Detectors www.DataSheet4U.com PDU-G106B-SM PACKAGE DIMENSIONS inch [mm] .095 [2.43] .020 [0.50] 45° .032 [0.80] .138 [3.50] .126 [3.20] Ø.095 [2.40] .075 [1.90] .032 [0.80] QUARTZ WINDOW .034 [0.85] .091 [2.30] .058 [1.48] .016 [0.40] SQ ANODE Ø.039 [Ø1.00] .110 [2.80] .083 [2.10] CATHODE .051 [1.30] .067 [1.70] .169 [4.30] .0134 [0.340] .0126 [0.320] SUGGESTED PAD LAYOUT CHIP SMD PACKAGE FEATURES 320nm UVB response Visible & NIR blind Photovoltaic operation High shunt resistance DESCRIPTION The PDU-G106B-SM is a GaN UV photodiode with a spectral range from 200nm to 320nm and is ideal for UVB sensing applications available in an SMD package. 1.0000 APPLICATIONS UVB power meters Sun dosimeters UV epoxy curing UV instrumentation ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -30 MIN MAX 5 +90 +85 +260 UNITS °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.1000 0.0100 V 0.0010 0.0001 * 1/16 inch from case for 3 seconds max. 0.0000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Response Time** TEST CONDITIONS UVI = 1...