PDU-G101A

UV Enhanced GaN Detectors www.DataSheet4U.com Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] PDU-G101A .055 [1.40] 2X Ø.017 [0.43] CATHODE VIEWING ANGLE 61° Ø .118 [3.00] ANODE .100 [2.54] Ø.181 [4.60] CHIP .087 [2.21] .500 [12.70] CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ .0134 [0.340] TO-46 PACKAGE .0126 [0.320] ACTIVE AREA = 0.076 mm ² FEATURES 365nm UVB response Visible & NIR blind Photovoltaic operation High shunt resistance DESCRIPTION The PDU-G101A is a GaN UV photodiode with a spectral range from 200nm to 365nm and is ideal for UVB sensing applications available in a TO-46 can package. 1.000 APPLICATIONS UVB power meters Sun dosimeters UV epoxy curing UV instrumentation ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -30 MIN MAX 5 +90 +85 +260 UNITS V °C °C °C Responsivity (A/W) 0.100 SPECTRAL RESPONSE 0.010 0.001 * 1/16 inch from case for 3 seconds max. 0.000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time TEST CONDITIONS UVI = 1 VR = 1V VR = 10 mV VR = 0V, ...