US6U37

www.DataSheet4U.com US6U37 Transistors 2.5V Drive Nch+SBD MOSFET US6U37 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) TUMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U37 zApplications Switching zPackage specifications Package Type US6U37 Code Basic ordering unit (pieces) Taping TR 3000 zInner circuit (6) (5) (4) ∗2 (1)Gate (2)Source (3)Cathode (4)Anode (5)Anode (6)Drain ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits 30 ±12 ±1.5 ±6.0 0.6 6.0 150 0.7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cycle ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM Tj PD ∗1 Limits 25 20 0.7 10 150 0.5 Unit V V A A °C W / ELEMENT ∗2 0.2Max. 1/4 www.DataSheet4U.com US6U37 Transistors Parameter Power dissipation Range of storage temperature ∗1 Mounted on a ceramic board Symbol PD ∗1 Ts...