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BUL642D2 High Speed, High Gain Bipolar NPNTransistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light B...