Triacs
BTB16-600CW3G, BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control...
Description
BTB16-600CW3G, BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 25°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 1000 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 8.5 A/ms minimum at 125°C These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTB16−600CW3G BTB16−800CW3G
VDRM, VRRM
600 800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms)
IT(RMS) ITSM
I2t
16 A 170 A
144 A2sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
VDSM/ VRSM
VDSM/VRSM +100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t...
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