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BTB08-600CW3G Dataheets PDF



Part Number BTB08-600CW3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Triacs Silicon Bidirectional Thyristors
Datasheet BTB08-600CW3G DatasheetBTB08-600CW3G Datasheet (PDF)

www.DataSheet4U.com BTB08-600CW3G, BTB08-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com •ăBlocking Voltage to 800 V •ăOn‐State Current Rating of 8 A RMS at 25°C •ăUniform Gate Trigger Currents in Three Quadrants •ăHigh Immunity to dV/dt - 1500 V/ms minimum at 125°C •ăMinimizes Snubber Networks for Protection •ăIndustry Standard TO‐220AB .

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www.DataSheet4U.com BTB08-600CW3G, BTB08-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com •ăBlocking Voltage to 800 V •ăOn‐State Current Rating of 8 A RMS at 25°C •ăUniform Gate Trigger Currents in Three Quadrants •ăHigh Immunity to dV/dt - 1500 V/ms minimum at 125°C •ăMinimizes Snubber Networks for Protection •ăIndustry Standard TO‐220AB Package •ăHigh Commutating dI/dt - 3.0 A/ms minimum at 125°C •ăThese are Pb-Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600CW3G BTB08-800CW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.0 90 A A Value Unit V TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM 1 2 3 TO-220AB CASE 221A STYLE 4 BTB08-xCWG AYWW I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg 36 VDSM/VRSM +100 4.0 20 1.0 -ā40 to +125 -ā40 to +150 A2sec V A W W °C °C x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device BTB08-600CW3G BTB08-800CW3G Package TO-220AB (Pb-Free) TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semicon‐ ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ©Ă Semiconductor Components Industries, LLC, 2008 1 February, 2008 - Rev. 1 Publication Order Number: BTB08-600CW3/D BTB08-600CW3G, BTB08-800CW3G www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 2.5 60 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On‐State Voltage (Note 2) (ITM = ±ā11 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) Latching Current (VD = 24 V, IG = 42 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Non-Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) Critical Rate of Rise of On-State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) Critical Rate of Rise of Off‐State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (dI/dt)c dI/dt dV/dt 3.0 1500 50 A/ms A/ms V/ms VTM IGT 2.5 2.5 2.5 IH IL VGT 0.5 0.5 0.5 VGD 0.2 0.2 0.2 1.7 1.1 1.1 V 50 80 50 V 35 35 35 45 mA mA 1.55 V mA TJ = 25°C TJ = 125°C IDRM/ IRRM mA 0.005 1.0 Symbol Min Typ Max Unit http://onsemi.com 2 BTB08-600CW3G, BTB08-800CW3G www.DataSheet4U.com Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-pha.


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