BTA16-800BW3G

www.DataSheet4U.com BTA16-600BW3G, BTA16-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 80°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 1500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 4.0 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These are Pb−Free Devices Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 16 170 A A Value Unit V 1 TRIACS 16 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA16−600BW3G BTA16−800BW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) BTA16−xBWG AYWW 2 3 TO−220AB CASE 221A STYLE 12 x A Y WW ...