KTC4380

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION FEATURES ¡⁄ ¡⁄ ¡⁄ High Voltage : VCEO=160V. Large Continuous Collector Current Capability. Recommended for LED Drive Application. A H KTC4380 www.DataSheet4U.com EPITAXIAL PLANAR NPN TRANSISTOR C G D K F F D MAXIMUM RATING (Ta=25¡ ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * : Mounted on ceramic substrate (250mm2 ¡¿ SYMBOL VCBO VCEO VEBO IC IB PC PC* Tj Tstg 0.8t) RATING 160 160 6 1 0.5 0.5 W 1 150 ¡ ¡ Type Name UNIT V V V A A 1 2 3 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 Marking hFE Rank Lot No. -55¡› 150 ELECTRICAL CHARACTERISTICS (Ta=25¡ CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification Y(2) : 160~320 ) TEST CONDITION VCB=160V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 VCE=5V, IC=200mA IC=500mA, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCB=10V, IE=0, f=1MHz MIN. 160 160 0.45 TYP. 100 15 MAX. 1.0 1.0 320 1.5 0.75 V V MHz pF UNIT ¥ A ¥ A V SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) VBE fT Cob 2010. 1. 6 Revision No : 0 D2 J B E SOT-89 1/3 KTC4380 www...