KTA1572

SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation. B KTA1572 www.DataSheet4U.com EPITAXIAL PLANAR PNP TRANSISTOR D DIM A B C D E F G H J K L M H N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -120 -100 -5 -1 -3 -300 1 150 -55 150 UNIT V V V A O F H M C Q P DEPTH:0.2 A S K J F H E M 3 N L D R G mA W 1 N 2 H 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ** Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current ) TEST CONDITION IC=-100 A IC=-1mA IE=-100 A VCB=-80V, IE=0A VEB=-4V, IC=0A VCES=-80V, VBE=0V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-1A, IB=-100mA VCE=-5V, IC=-1A VCE=-5V, IC=-1mA VCE=-5V, IC=-250mA VCE=-5V, IC=-500mA VCE=-5V, IC=-1A VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz MIN. -120 -100 -5 150 150 150 125 100 TYP. 17 MAX. -100 ...