E50A2CS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES ¡⁄ ¡⁄ Average Forward Current : IO=50A. E50A2CS, E50A2CR www.DataSheet4U.com STACK SILICON DIFFUSED DIODE A3 A2 D3 A1 D1 D2 B1 E F POLARITY E50A2CS (+ Type) E50A2CR (- Type) T C2 H MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VRRM IF(AV) IFSM Tj Tstg RATING 200 50 600 (50Hz) -40¡› -40¡› 190 ¡ ¡ 150 UNIT V A A DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ELECTRICAL CHARACTERISTICS (Ta=25¡ CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Temperature Resistance ) TEST CONDITION IFM=100A VRRM=200V IF=0.1A, IR=0.1A DC total junction to case MIN. TYP. MAX. 1.05 50 15 1.0 ¡ UNIT V ¥ A ¥ S /W SYMBOL VFM IRRM trr Rth 2010. 1. 28 Revision No : 0 C1 G B2 Repetitive Peak Reverse Voltage : VRRM=200V. 1/2 E50A2CS, E50A2CR www.DataSheet4U.com AVERAGE FORWARD CURRENT I F(AV) (A) I F - VF 1000 FORWARD CURRENT I F (A) I F(AV) - Ta 50 40 30 20 10 0 Ta=Tc 100 10 1 0.7 0.8 0.9 1 1.1 1.2 0 40 80 120 160 180 200 FORWARD VOLTAGE V F (V) AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 0 ...