2SB1668

www.DataSheet4U.com 2SB1668 Transistors Power Transistor (−100V, −8A) 2SB1668 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607. !External dimensions (Units : mm) 10.0 4.5 φ 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature ∗ Single pulse, Pw = 100ms 2.54 2.54 (1) (2) (3) (1) (2) (3) 0.75 2.6 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −100 −100 −7 −8 −10 2 30 150 −55 ∼ +150 Unit V V V A (DC) A (Pulse) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : TO-220FN ∗ W W (Tc = 25°C) °C °C !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1668 TO-220FN 1k~20k 500 !Circuit diagram B C R1 R1 5kΩ R2 300kΩ R2 E B : Base C : Collector E : Emitter !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗1 Measured using pulse current. Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. −100 −100 − − − 1000 − − Typ. − − − − −1.0 10000 12 90 Max. − − −10 −3 −1.5 20000 − − Unit V V µA mA V − MHz pF IC = −5...