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SUP40N25-60 Dataheets PDF



Part Number SUP40N25-60
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel 250-V (D-S) MOSFET
Datasheet SUP40N25-60 DatasheetSUP40N25-60 Datasheet (PDF)

SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.060 at VGS = 10 V 0.064 at VGS = 6 V ID (A) 40 38.7 Qg (Typ) 95 TO-220AB FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial D RoHS COMPLIANT GD S Top View Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25.

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SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.060 at VGS = 10 V 0.064 at VGS = 6 V ID (A) 40 38.7 Qg (Typ) 95 TO-220AB FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial D RoHS COMPLIANT GD S Top View Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 250 ± 30 40 23 70 35 61 300b 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junc.


SUB40N06-25L SUP40N25-60 PT61011


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