RSU002N06

www.DataSheet4U.com 2.5V Drive Nch MOSFET RSM002N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RK  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSM002N06 Taping T2L 8000   Inner circuit (3) ∗2 (1)  Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. ∗1 Limits 60 20 250 1 125 1 150 150 55 to +150 Unit V V mA A mA A mW C C (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 (1) GATE (2) SOURCE (3) DRAIN  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.04 - Rev.A RSM002N06 Electrical characteristics (Ta = 25C) Parameter Symbol Data Sheet www.DataSheet4U.com Min. 60 1.0 0.25 - Typ. 1.7 2.1 2.3 3.0 15 4.5 2.0 3.5 5 18 28 Max. 10 1 2.3 2.4 3.0 3.2 12.0 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=250mA, VGS=10V ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V ID=10mA, VGS=2...