2.5V Drive Nch MOSFET
www.DataSheet4U.com
2.5V Drive Nch MOSFET
RSM002N06
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
VMT3
...
Description
www.DataSheet4U.com
2.5V Drive Nch MOSFET
RSM002N06
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
VMT3
Features 1) High speed switing. 2) Small package(VMT3). 3) Low voltage drive(2.5V drive).
Abbreviated symbol : RK
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RSM002N06 Taping T2L 8000
Inner circuit
(3)
∗2 (1)
Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.
∗1
Limits 60 20 250 1 125 1 150 150 55 to +150
Unit V V mA A mA A mW C C
(2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Continuous Pulsed Continuous Pulsed
VDSS VGSS ID IDP *1 IS ISP PD Tch Tstg
*1 *2
(1) GATE (2) SOURCE (3) DRAIN
Thermal resistance Parameter Channel to ambient
* Each terminal mounted on a recommended land.
Symbol Rth (ch-a)*
Limits 833
Unit C / W
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved. ○
1/5
2010.04 - Rev.A
RSM002N06
Electrical characteristics (Ta = 25C) Parameter Symbol
Data Sheet
www.DataSheet4U.com
Min. 60 1.0 0.25 -
Typ. 1.7 2.1 2.3 3.0 15 4.5 2.0 3.5 5 18 28
Max. 10 1 2.3 2.4 3.0 3.2 12.0 -
Unit A V A V
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=250mA, VGS=10V ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V ID=10mA, VGS=2...
Similar Datasheet