RRR040P03

www.DataSheet4U.com 4V Drive Pch MOSFET RRR040P03  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TSMT3 Features 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3). 3) 4V drive. (3) (1) (2) Abbreviated symbol : UG  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RRR040P03 Type Taping TL 3000   Inner circuit (3) ∗2 (1) ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30  20 4 Unit V V A A A A W C C (1) Gate (2) Source (3) Drain (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1  16 0.8 16 1.0 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 125 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RRR040P03  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-d...