RFUS20TM6S

www.DataSheet4U.com Super Fast Recovery Diode RFUS20TM6S Series Ultra Fast Recovery Dimensions(Unit : mm) +0.3 -0.1 +0.3 -0.1 +0.2 -0.1 Structure Applications General rectification Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05 Construction Silicon epitaxial planar Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg +0.4 -0.2 (1) (2) (3) Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 600 600 20 100 150 -55 to 150 Tc=50C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Unit V V A A C C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 2.3 0.05 23 － Max. 2.8 10 35 1.8 Unit V μA ns C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RFUS20TM6S Electrical characteristics curves 100 Tj=125 C Tj=150 C REVERSE CURRENT : I R(nA) FORWARD CURRENT : IF(A) 10 10000 Tj=125 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100000 Tj=150 C 1000 www.DataSheet4U.com Data Sheet f=1MHz Tj=25 C Tj=25 C Tj=75 C 1000 100 100 Tj=75 C 1 10 Tj=25 C 0.1 0 1000 2000 3000 4000 1...