RFUS20TM4S

www.DataSheet4U.com Super Fast Recovery Diode RFUS20TM4S Series Ultra Fast Recovery Dimensions (Unit : mm) +0.3 −0.1 +0.3 −0.1 +0.2 −0.1 Structure Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type +0.4 −0.2 Applications General rectification (1) (2) (3) Construction Silicon epitaxial planer +0.1 −0.05 Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Forward current surge peak Junction temperature Storage temperature Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=68C Limits 430 430 20 100 150 -55to+150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) Conditions IF=20A VR=430V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.4 0.05 24 - Max. 1.6 10 35 2 Unit V μA ns C/W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RFUS20TM4S 　 www.DataSheet4U.com Data Sheet Electrical characteristic curves 100 Tj=125 C FORWARD CURRENT : IF(A) Tj=150 C 10 Tj=25 C Tj=75 C 1 100000 Tj=150 C REVERSE CURRENT : IR(nA) 10000 Tj=125 C 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) f=1MHz Tj=25 C 1000 100 100 Tj=75 C 10 Tj=25 C 0.1 0 500 1000 1500 2000...